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1

High-performance InGaP/GaAs superlattice–emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode

Jung-Hui Tsai, Chia-Hong Huang, Wen-Shiung Lour, Yi-Ting Chao, Jhih-Jhong Ou-Yang, Jia-Cing Jhou

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 467 KB

english, 2012

2

Three-Terminal Dual-Emitter Phototransistor with Both Voltage- and Power-Tunable Optical Gains

Chen, Hon-Rung, Chen, Wei-Tien, Hsu, Meng-Kai, Tan, Shih-Wei, Lour, Wen-Shiung

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 474 KB

english, 2005

3

Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/InxGa1-xAs/GaAs pseudomorphic high electron mobility transistor

Wen-Chau Liu, Wen-Lung Chang, Wen-Shiung Lour, Kuo-Hui Yu, Kun-Wei Lin, Chin-Chuan Cheng, Shiou-Ying Cheng

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 194 KB

english, 2001

4

An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage

Jung-Hui Tsai, Wen-Shiung Lour, Yi-Ting Chao, Sheng-Shiun Ye, Yung-Chun Ma, Jia-Cing Jhou, You-Ren Wu, Jhih-Jhong Ou-Yang

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 266 KB

english, 2012

5

InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction

Tsai, Jung Hui, Chiu, Shao Yen, Lour, Wen Shiung, Li, Chien Ming, Wu, Yi Zhen, Su, Ning Xing, Huang, Yin Shan

Journal:

Advanced Materials Research

Year:

2008

Language:

english

File:

PDF, 302 KB

english, 2008

6

High-performance double delta-doped sheets Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As/ Ga 0.51 In 0.49 P pseudomorphic heterostructure transistors

Chang, Wen-Lung, Pan, Hsi-Jen, Wang, Wei-Chou, Thei, Kong-Beng, Yu, Kuo-Hui, Lin, Kun-Wei, Cheng, Chin-Chuan, Lour, Wen-Shiung, Liu, Wen-Chau

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 277 KB

english, 2000

7

Promoted Potential of Heterojunction Phototransistor for Low-Power Photodetection by Surface Sulfur Treatment

Chen, Wei-Tien, Chen, Hon-Rung, Chiu, Shao-Yen, Hsu, Meng-Kai, Tsai, Jung-Hui, Lour, Wen-Shiung

Journal:

Journal of The Electrochemical Society

Year:

2007

Language:

english

File:

PDF, 145 KB

english, 2007

8

Fabrication of heterostructure-emitter bipolar transistor with a doping-superlattice collector

Chung-Yih Sun, Wen-Chau Liu, Der-Feng Guo, Wen-Shiung Lour, Rong-Chau Liu

Journal:

Superlattices and Microstructures

Year:

1993

File:

PDF, 401 KB

1993

9

Multi-state superlattice-emitter resonant-tunneling bipolar transistor with circuit applications

Wen-Shiung Lour, Wen-Chau Liu, Chung-Yih Sun, Der-Feng Guo, Rong-Chau Liu

Journal:

Superlattices and Microstructures

Year:

1993

File:

PDF, 242 KB

1993

10

Heterostructure confinement effect on the negative-differential-resistance (NDR) bipolar transistor

Wen-Chau Liu, Jun-Hui Tsai, Lih-Wen Laih, Cheng-Zu, Kong-Beng Thei, Wen-Shiung Lour, Der-Feng Guo

Journal:

Superlattices and Microstructures

Year:

1995

File:

PDF, 751 KB

1995

11

Device linearity improvement and current enhancement utilizing high-to-low doping-channel FETs

Wen-Shiung Lour, Wen-Chau Liu, Jung-Hui Tasi, Lih-Wen Laih, H.R. Chen

Journal:

Superlattices and Microstructures

Year:

1996

Language:

english

File:

PDF, 230 KB

english, 1996

12

Power MISFETs fabricated with superlatticed gate “insulators” and transition buffer layers

Wen-Chau Liu, Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.58 MB

english, 1990

13

AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy

Wen-Chau Liu, Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1991

Language:

english

File:

PDF, 923 KB

english, 1991

14

Temperature dependence of double negative-differential resistance of a superlattice-emitter transistor

Wen-Chau Liu, Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1991

Language:

english

File:

PDF, 1.23 MB

english, 1991

15

Investigation of heterostructure-confinement-emitter transistors

Wen-Shiung Lour, Wen-Chau Liu, Yeong-Her Wang

Journal:

Solid-State Electronics

Year:

1992

Language:

english

File:

PDF, 869 KB

english, 1992

16

A tristate switching device with double delta-doped quantum well structure

Wei-Chou Hsu, Der-Feng Guo, Wen-Chau Liu, Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 434 KB

english, 1993

17

Fabrication of voltage-controlled strained-layer quantum well three-terminal switching device

Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 370 KB

english, 1995

18

Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor

Lih-Wen Laih, Jung-Hui Tsai, Wen-Chau Liu, Wei-Chou Hsu, Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 611 KB

english, 1995

19

Characteristics of metal-insulated-semiconductor (MIS) like In0.2Ga0.8AsGaAs doped-channel structure

Lih-Wen Laih, Wen-Shiung Lour, Jung-Hui Tsai, Wen-Chau Liu, Cheng-Zu Wu, Kong-Beng Thei, Rong-Chau Liu

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 411 KB

english, 1996

20

Characteristics of camel-gate structures with active doping channel profiles

Jung-Hui Tsai, Wen-Shiung Lour, Lih-Wen Laih, Rong-Chau Liu, Wen-Chau Liu

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 478 KB

english, 1996

21

On the double negative-differential resistance of a superlattice-emitter resonant-tunneling bipolar transistor

Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 397 KB

english, 1995

22

Two step doping channel FET with symmetric normally on and normally off characteristics

Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 280 KB

english, 1995

23

Characteristics of functional heterostructure-emitter bipolar transistors (HEBTs)

Kong-Beng Thei, Jung-Hui Tsai, Wen-Chau Liu, Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 454 KB

english, 1996

24

VPE grown ZnSeSi PIN-like visible photodiodes

Wen-Shiung Lour, Chung-Cheng Chang

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 537 KB

english, 1996

25

Comprehensive investigation on planar type of Pd–GaN hydrogen sensors

Shao-Yen Chiu, Hsuan-Wei Huang, Tze-Hsuan Huang, Kun-Chieh Liang, Kang-Ping Liu, Jung-Hui Tsai, Wen-Shiung Lour

Journal:

International Journal of Hydrogen Energy

Year:

2009

Language:

english

File:

PDF, 1.03 MB

english, 2009

26

Investigation on electronic properties of semiconductor delta-doped structures

Wen-Chau Liu, Chung-Yih Sun, Wen-Shiung Lour

Journal:

Superlattices and Microstructures

Year:

1991

Language:

english

File:

PDF, 448 KB

english, 1991

27

Characteristics of the GaAs monolayer-doped structure and its applications for power field-effect transistor fabrication

Wen-Chau Liu, Chung-Yih Sun, Wen-Shiung Lour

Journal:

Materials Science and Engineering: B

Year:

1991

Language:

english

File:

PDF, 493 KB

english, 1991

28

Comprehensive study of Pd/GaN metal–semiconductor–metal hydrogen sensors with symmetrically bi-directional sensing performance

Shao-Yen Chiu, Hsuan-Wei Huang, Tze-Hsuan Huang, Kun-Chieh Liang, Kang-Ping Liu, Jung-Hui Tsai, Wen-Shiung Lour

Journal:

Sensors and Actuators B: Chemical

Year:

2009

Language:

english

File:

PDF, 756 KB

english, 2009

29

Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface

Shih-Wei Tan, Hon-Ren Chen, Min-Yuan Chu, Wei-Tien Chen, An-Hung Lin, Meng-Kai Hsu, Tien-Sheng Lin, Wen-Shiung Lour

Journal:

Superlattices and Microstructures

Year:

2005

Language:

english

File:

PDF, 728 KB

english, 2005

30

Extrinsic base surface-passivated dual-emitter heterojunction phototransistors

Wei-Tien Chen, Hon-Rung Chen, Meng-Kai Hsu, Shao-Yen Chiu, Wen-Shiung Lour

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 866 KB

english, 2006

31

Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors

Kun-Wei Lin, Kuo-Hui Yu, Wen-Lung Chang, Chin-Chuan Cheng, Kuan-Po Lin, Chih-Hung Yen, Wen-Shiung Lour, Wen-Chau Liu

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 160 KB

english, 2001

32

Investigation of doping-spike effect on InGaPGaAs single heterojunction bipolar transistors

Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 353 KB

english, 1997

33

ZnSeSi visible-sensitivity emitter bipolar transistors

Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 266 KB

english, 1997

34

Field-effect-transistor and real-space-transfer behaviors by double-heterojunction doped channel

Chih-Yung Lia, Wen-Shiung Lour, Jing-Lung Hsieh

Journal:

Thin Solid Films

Year:

1999

Language:

english

File:

PDF, 1.48 MB

english, 1999

35

Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs)

Shih-Wei Tan, Wei-Tien Chen, Min-Yuan Chu, Wen-Shiung Lour

Journal:

Superlattices and Microstructures

Year:

2003

Language:

english

File:

PDF, 158 KB

english, 2003

36

Morphological defects on Be-doped AlGaAs layers grown by MBE

Wen-Chau Liu, Der-Feng Guo, Chung-Yih Sun, Wen-Shiung Lour

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 648 KB

english, 1991

37

Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure

Shao-Yen Chiu, Jung-Hui Tsai, Hsuan-Wei Huang, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Tzung-Min Tsai, Kuo-Yen Hsu, Wen-Shiung Lour

Journal:

Sensors and Actuators B: Chemical

Year:

2009

Language:

english

File:

PDF, 882 KB

english, 2009

38

Microwave complementary doped-channel field-effect transistors

Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Wen-Chau Liu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, Yin-Shan Huang

Journal:

Superlattices and Microstructures

Year:

2009

Language:

english

File:

PDF, 605 KB

english, 2009

39

On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, Wen-Chau Liu

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 344 KB

english, 2009

40

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Jung-Hui Tsai, Wen-Shiung Lour, Chia-Hong Huang, Ning-Feng Dale, Yuan-Hong Lee, Jhih-Syuan Sheng, Wen-Chau Liu

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 383 KB

english, 2010

41

Multi-step doped-channel camel-gate FETs with a linear and enhanced transconductance

Wen-Shiung Lour

Journal:

Microelectronics Journal

Year:

1997

Language:

english

File:

PDF, 496 KB

english, 1997

42

High-performance InGaP/GaAspnpδ-doped heterojunction bipolar transistor

Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo

Journal:

Year:

2009

Language:

english

File:

PDF, 194 KB

english, 2009

43

InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage

Jung-Hui Tsai, Wen-Shiung Lour, Tzu-Yen Weng, Chien-Ming Li

Journal:

Year:

2010

Language:

english

File:

PDF, 158 KB

english, 2010

44

InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures

Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu, Yi-Zhen Wu, Ying-Feng Dai

Journal:

Year:

2010

Language:

english

File:

PDF, 195 KB

english, 2010

45

A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

Jung-Hui Tsai, Ching-Sung Lee, Wen-Shiung Lour, Yung-Chun Ma, Sheng-Shiun Ye

Journal:

Year:

2011

Language:

english

File:

PDF, 166 KB

english, 2011

46

Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

Jung-Hui Tsai, Der-Feng Guo, Wen-Shiung Lour

Journal:

Year:

2011

Language:

english

File:

PDF, 163 KB

english, 2011

47

Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer

Shih-Wei Tan, Jung-Hui Tsai, Shih-Wen Lai, Chieh Lo, Wen-Shiung Lour

Journal:

International Journal of Hydrogen Energy

Year:

2011

Language:

english

File:

PDF, 1.58 MB

english, 2011

48

On the low-medium-high step-modulation-doped-channel (LMH-SMDC) heterostructure field-effect transistor

Yung-Hsin Shie, Wen-Lung Chang, Hsi-Jen Pan, Shiou-Ying Cheng, Wen-Shiung Lour, Wen-Chau Liu

Journal:

Materials Chemistry and Physics

Year:

1999

Language:

english

File:

PDF, 264 KB

english, 1999

49

Investigation of AlGaAs/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Wen-Chua Liu, Wen-Shiung Lour, Yeong-Her Wang

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 650 KB

english, 1992

50

Influence of channel doping-profile on camel-gate field effect transistors

Wen-Shiung Lour, Jung-Hui Tsai, Lih-Wen Laih, Wen-Chau Liu

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 637 KB

english, 1996